Invention Grant
- Patent Title: Chemical vapor deposition of perovskite thin films
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Application No.: US16111558Application Date: 2018-08-24
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Publication No.: US11094881B2Publication Date: 2021-08-17
- Inventor: Parag Banerjee , Peifu Cheng , Xiao Chen , Yoon Myung
- Applicant: Parag Banerjee , Peifu Cheng , Xiao Chen , Yoon Myung
- Applicant Address: US MO St. Louis; US MO St. Louis; US MO St. Louis; US MO St. Louis
- Assignee: Parag Banerjee,Peifu Cheng,Xiao Chen,Yoon Myung
- Current Assignee: Parag Banerjee,Peifu Cheng,Xiao Chen,Yoon Myung
- Current Assignee Address: US MO St. Louis; US MO St. Louis; US MO St. Louis; US MO St. Louis
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; C23C16/30

Abstract:
Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices.
Public/Granted literature
- US20190074439A1 CHEMICAL VAPOR DEPOSITION OF PEROVSKITE THIN FILMS Public/Granted day:2019-03-07
Information query
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