Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16298157Application Date: 2019-03-11
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Publication No.: US11095256B2Publication Date: 2021-08-17
- Inventor: Toshiki Seshita , Yasuhiko Kuriyama
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: White & Case LLP
- Priority: JPJP2018-102583 20180529
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/193 ; H03F1/02 ; H03F3/72

Abstract:
A semiconductor device includes three transistors, five switches, two inductors, and a capacitor. A first transistor has a gate. The switches have one terminal connected in series with a drain of the first transistor in parallel. A second transistor has a source connected to the first switch and a grounded gate. A third transistor having a source connected to the second switch and a grounded gate. A first inductor and a second inductor each has one terminal connected in series with the third switch in parallel. A fourth switch has one terminal connected to the first inductor and another terminal connected to the source of the second transistor. A fifth switch has one terminal connected to the second inductor and another terminal connected to the source of the third transistor. A capacitor connected between the one terminal of the fourth switch and the one terminal of the fifth switch.
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