Invention Grant
- Patent Title: Chip capacitor and manufacturing method thereof
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Application No.: US16677591Application Date: 2019-11-07
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Publication No.: US11101071B2Publication Date: 2021-08-24
- Inventor: Keishi Watanabe
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2018-213218 20181113
- Main IPC: H01G4/012
- IPC: H01G4/012 ; H01G4/30 ; H01G4/228 ; H01G4/06

Abstract:
The present disclosure provides a chip capacitor, including: a first capacitor unit formed over a substrate and including a first lower electrode, first dielectric layer and first upper electrode; a second insulating layer over the first capacitor unit; a second conductive layer over the second insulating layer, and includes a first wiring portion and a second wiring portion, the first wiring portion being connected to the first lower electrode by a first contact via and connected to a first pad by a third contact via, the second wiring portion being connected to the first upper electrode by a second contact via and connected to a second pad by a fourth contact via; a first external electrode connected to the first wiring portion; and a second external electrode connected to the second wiring portion.
Public/Granted literature
- US20200152380A1 CHIP CAPACITOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-05-14
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