Invention Grant
- Patent Title: Ion-ion plasma atomic layer etch process
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Application No.: US16595339Application Date: 2019-10-07
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Publication No.: US11101113B2Publication Date: 2021-08-24
- Inventor: Kenneth S. Collins , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Leonid Dorf , Yang Yang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67
Abstract:
A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
Public/Granted literature
- US20200035454A1 ION-ION PLASMA ATOMIC LAYER ETCH PROCESS Public/Granted day:2020-01-30
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