- Patent Title: Ultrathin atomic layer deposition film accuracy thickness control
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Application No.: US16457635Application Date: 2019-06-28
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Publication No.: US11101129B2Publication Date: 2021-08-24
- Inventor: Jun Qian , Hu Kang , Adrien LaVoie , Seiji Matsuyama , Purushottam Kumar
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C23C16/02
- IPC: C23C16/02 ; H01L21/02 ; H01J37/32 ; C23C16/455
Abstract:
Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.
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