Invention Grant
- Patent Title: Semiconductor device and method of manufacture
-
Application No.: US16052252Application Date: 2018-08-01
-
Publication No.: US11101140B2Publication Date: 2021-08-24
- Inventor: Wen-Hsin Wei , Hsien-Pin Hu , Shang-Yun Hou , Chi-Hsi Wu , Chen-Hua Yu , Wen-Jung Chuang , Chun-Che Chen , Jhih-Ming Lin , Chih-Ching Lin , Shih-Wen Huang , Chun Hua Chang , Tsung-Yang Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/467
- IPC: H01L21/467 ; H01L21/306 ; H01L21/3213 ; H01L23/00 ; H01L21/56 ; H01L23/498 ; H01L23/58 ; H01L23/28 ; H01L21/48 ; H01L25/065 ; H01L23/31
Abstract:
An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.
Public/Granted literature
- US20190148166A1 Semiconductor Device and Method of Manufacture Public/Granted day:2019-05-16
Information query
IPC分类:
