Invention Grant
- Patent Title: Semiconductor device with backside inductor using through silicon vias
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Application No.: US16583524Application Date: 2019-09-26
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Publication No.: US11101211B2Publication Date: 2021-08-24
- Inventor: Hassan Naser , Calist Friedman , Matthew A. Cooke , Daniel L. Stasiak
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Alexander G. Jochym
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/48 ; H01L49/02 ; H01L21/768 ; H01L23/525

Abstract:
An approach to creating a semiconductor chip including a semiconductor substrate with one or more topside metal layers and one or more backside metal layers. The approach creates the semiconductor chip with one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate and one or more inductors in the one or more backside metal layer. Furthermore, the approach creates the semiconductor chip with one or more through silicon vias extending through the semiconductor substrate connecting the one or more inductors in the one or more backside metal layers and the one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate.
Public/Granted literature
- US20210098370A1 SEMICONDUCTOR DEVICE WITH BACKSIDE INDUCTOR USING THROUGH SILICON VIAS Public/Granted day:2021-04-01
Information query
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