Invention Grant
- Patent Title: Semiconductor device and power conversion device
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Application No.: US16472097Application Date: 2017-02-09
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Publication No.: US11101225B2Publication Date: 2021-08-24
- Inventor: Hiroyuki Harada , Naoki Yoshimatsu , Osamu Usui , Yuji Imoto , Yuki Yoshioka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/004799 WO 20170209
- International Announcement: WO2018/146780 WO 20180816
- Main IPC: H01L23/057
- IPC: H01L23/057 ; H01L23/047 ; H01L23/31 ; H01L23/495 ; H01L23/24 ; H01L23/373 ; H01L23/36 ; H01L23/28 ; H01L25/07 ; H01L25/18 ; H01L23/48 ; H01L23/00 ; H02P27/08

Abstract:
A semiconductor chip (6) is disposed on the insulation substrate (2). A lead frame (8) is bonded to an upper surface of the semiconductor chip (6). A sealing resin (12) covers the semiconductor chip (6), the insulation substrate (2), and the lead frame (8). A stress mitigation resin (13) having a lower elastic modulus than that of the sealing resin (12) is partially applied to an end of the lead frame (8).
Public/Granted literature
- US20200098701A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2020-03-26
Information query
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