Invention Grant
- Patent Title: System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)
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Application No.: US16850691Application Date: 2020-04-16
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Publication No.: US11101320B2Publication Date: 2021-08-24
- Inventor: Ryan Hatcher , Titash Rakshit , Jorge Kittl , Rwik Sengupta , Dharmendar Palle , Joon Goo Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: The Farrell Law Firm, P.C.
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L27/22 ; G11C11/16 ; G11C13/00 ; H01F10/32 ; H01L43/02 ; H01L27/24
Abstract:
A weight cell, an electronic device and a device are provided. The weight cell includes a first resistive memory element and a second resistive memory element, a select transistor, and a layer of Spin Hall (SH) material disposed between the first resistive memory element and the second resistive memory element, the layer of the SH material including a first contact and a second contact. The first contact of the SH material is connected to a drain of the select transistor and the second contact of the SH material is connected to an external word line.
Public/Granted literature
- US20210118950A1 3T2R BINARY WEIGHT CELL WITH HIGH ON/OFF FOR MEMORY DEVICE PROGRAMMED WITH TRANSVERSE CURRENTS Public/Granted day:2021-04-22
Information query
