A semiconductor device includes a semiconductor layer that has a main surface and that includes an active region, a first-conductivity-type first impurity region formed at a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type field limit region formed along a peripheral edge of the active region in a surface layer portion of the first impurity region, and a second-conductivity-type low concentration region that has a second-conductivity-type impurity concentration lower than a second-conductivity-type impurity concentration of the field limit region and that is formed along a peripheral edge of the field limit region in a region on a side opposite to the active region with respect to the field limit region in the surface layer portion of the first impurity region.