Invention Grant
- Patent Title: Group III nitride semiconductor device and method of manufacturing group III nitride semiconductor substrate
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Application No.: US16245003Application Date: 2019-01-10
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Publication No.: US11101351B2Publication Date: 2021-08-24
- Inventor: Keita Kataoka , Tetsuo Narita
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Applicant Address: JP Nagakute
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Current Assignee Address: JP Nagakute
- Agency: Oliff PLC
- Priority: JPJP2018-019460 20180206
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/78 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L21/02 ; H01L29/06 ; H01L29/66 ; H01L21/266 ; H01L21/324
Abstract:
A method of manufacturing a group III nitride semiconductor substrate may comprise introducing group III element vacancies to a first region of the group III nitride semiconductor substrate. The method may comprise introducing an acceptor element to a second region of the group III nitride semiconductor substrate. The second region may contact the first region at least in part. The method may comprise performing annealing to activate the acceptor element in the second region.
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