Invention Grant
- Patent Title: Semiconductor device and forming method thereof
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Application No.: US16232932Application Date: 2018-12-26
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Publication No.: US11101362B2Publication Date: 2021-08-24
- Inventor: Miin-Jang Chen , Sheng-Han Yi , Chen-Hsuan Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Maschoff Brennan
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L49/02 ; H01L29/78 ; H01L29/66

Abstract:
A device includes a substrate, a first zirconium-containing oxide layer, a first metal oxide layer and a top electrode. The first zirconium-containing oxide layer is over a substrate and having ferroelectricity or antiferroelectricity. The first metal oxide layer is in contact with the first zirconium-containing oxide layer. The first metal oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer. The top electrode is over the first zirconium-containing oxide layer.
Public/Granted literature
- US20200035807A1 SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF Public/Granted day:2020-01-30
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