Invention Grant
- Patent Title: Contact-first field-effect transistors
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Application No.: US16670894Application Date: 2019-10-31
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Publication No.: US11101367B2Publication Date: 2021-08-24
- Inventor: Terence B. Hook , Myung-Hee Na , Balasubramanian Pranatharthiharan , Andreas Scholze
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Sherman IP LLP
- Agent Kenneth L. Sherman; Hemavathy Perumal
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L29/66 ; H01L29/417 ; H01L29/08 ; H01L29/423 ; H01L29/78
Abstract:
A method for forming a device structure provides for forming a fin of a semiconductor material. A first contact is formed on the fin. A second contact is formed on the fin and spaced along a length of the fin from the first contact. A self-aligned gate electrode is formed on the fin that is positioned along the length of the fin between the first contact and the second contact.
Public/Granted literature
- US20200066871A1 CONTACT-FIRST FIELD-EFFECT TRANSISTORS Public/Granted day:2020-02-27
Information query
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