Invention Grant
- Patent Title: Dual-use semiconductor device for solar power and data storage
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Application No.: US16796680Application Date: 2020-02-20
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Publication No.: US11101389B2Publication Date: 2021-08-24
- Inventor: Vijay Ahirwar , Sri Varsha Rottela , Nilesh N Khude , B Hari Ram
- Applicant: Marvell Asia Pte, Ltd.
- Applicant Address: SG Singapore
- Assignee: Marvell Asia Pte, Ltd.
- Current Assignee: Marvell Asia Pte, Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L31/02 ; H01L21/28 ; G11C11/56 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L27/11521 ; H01L29/66 ; H01L29/788 ; H01L31/068 ; H01L31/18

Abstract:
The present disclosure describes aspects of a dual-use semiconductor device for solar power and data storage. In some aspects, a dual-use semiconductor device is selectively configured to generate power by coupling regions having a same type of doping to form a PN junction by which power is generated in response to light. The generated power may be provided to a load coupled to contacts (e.g., front and backside contacts) of the dual-use semiconductor device. The dual-use semiconductor device is also selectively configurable for data storage by decoupling the regions of the same type of doping to provide respective data storage access terminals for accessing (e.g., writing or reading) a bit value that is stored as a level of charge by a floating-gate structure of the dual-use semiconductor device. By so doing, solar power arrays implemented with dual-use semiconductor devices may also provide data storage functionality.
Public/Granted literature
- US20200274005A1 Dual-Use Semiconductor Device for Solar Power and Data Storage Public/Granted day:2020-08-27
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