Invention Grant
- Patent Title: Gate drive apparatus and control method
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Application No.: US16895045Application Date: 2020-06-08
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Publication No.: US11101796B2Publication Date: 2021-08-24
- Inventor: Chiao-Shun Chuang , TaChuan Kuo , Ke-Horng Chen
- Applicant: Diodes Incorporated
- Applicant Address: US TX Plano
- Assignee: Diodes Incorporated
- Current Assignee: Diodes Incorporated
- Current Assignee Address: US TX Plano
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H03K17/687

Abstract:
An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.
Public/Granted literature
- US20210211128A1 Gate Drive Apparatus and Control Method Public/Granted day:2021-07-08
Information query
IPC分类: