According to one embodiment, a semiconductor memory device includes: a conductive layer including a first portion and a second portion electrically coupled to the first portion; a first contact plug electrically coupled to the first portion; a first semiconductor layer; a first insulating layer between the second portion and the first semiconductor layer, and between the first portion and the first semiconductor layer; a second contact plug coupled to the first semiconductor layer in a region in which the first insulating layer is formed; a first interconnect; and a first memory cell apart from the second portion in the second direction and storing information between the first semiconductor layer and the first interconnect.