Invention Grant
- Patent Title: Memory device and memory system including the same
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Application No.: US17001941Application Date: 2020-08-25
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Publication No.: US11107512B2Publication Date: 2021-08-31
- Inventor: Byunghoon Jeong , Kyungtae Kang , Jangwoo Lee , Jeongdon Ihm
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Hamess, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0123349 20191004
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/04 ; G11C7/10

Abstract:
A memory device includes a memory cell array configured to store data; and a data output circuit configured to transmit status data to an external device through at least one data line in a latency period in response to a read enable signal received from the external device and transmit the data read from the memory cell array to the external device through the at least one data line in a period subsequent to the latency period.
Public/Granted literature
- US20210104267A1 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2021-04-08
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