Invention Grant
- Patent Title: Memory with improved cross temperature reliability and read performance
-
Application No.: US16484881Application Date: 2018-12-28
-
Publication No.: US11107533B2Publication Date: 2021-08-31
- Inventor: Hua Tan , Jingxun Eric Wu , Yingying Zhu , Hui Yang , Bo Zhou
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/CN2018/124807 WO 20181228
- International Announcement: WO2020/133199 WO 20200702
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G06F3/06 ; G11C16/26 ; G11C16/06 ; G11C29/10 ; G11C29/50

Abstract:
A memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.
Public/Granted literature
- US20200219568A1 MEMORY WITH IMPROVED CROSS TEMPERATURE RELIABILITY AND READ PERFORMANCE Public/Granted day:2020-07-09
Information query