Invention Grant
- Patent Title: Method of processing semiconductor substrate
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Application No.: US16391098Application Date: 2019-04-22
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Publication No.: US11107671B2Publication Date: 2021-08-31
- Inventor: Wei-Chih Hsu , Kai-Lin Chuang , Yuan-Chi Chien , Jeng-Huei Yang , Jun-Xiu Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B08B17/00 ; H01L21/67 ; B08B3/04 ; B08B13/00 ; H01L21/306 ; H01L21/687
Abstract:
A method includes disposing a semiconductor substrate over a chuck. The chuck has a plurality of holes therein. The semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto. A liquid layer is formed flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck. The semiconductor substrate is moved toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.
Public/Granted literature
- US20190252181A1 METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE Public/Granted day:2019-08-15
Information query
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