Invention Grant
- Patent Title: Semiconductor manufacturing method and semiconductor manufacturing device
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Application No.: US16474639Application Date: 2018-02-01
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Publication No.: US11107685B2Publication Date: 2021-08-31
- Inventor: Keisuke Nakamura , Muneyoshi Suita , Akifumi Imai , Kenichiro Kurahashi , Tomohiro Shinagawa , Takashi Matsuda , Koji Yoshitsugu , Eiji Yagyu , Kunihiko Nishimura
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Xsensus LLP
- Priority: JPJP2017-017352 20170202
- International Application: PCT/JP2018/003408 WO 20180201
- International Announcement: WO2018/143344 WO 20180809
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/70 ; H01L21/18 ; H01L21/76 ; H01L21/02 ; H01L21/447
Abstract:
The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.
Information query
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