Invention Grant
- Patent Title: Substrate treating method
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Application No.: US16480728Application Date: 2017-10-24
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Publication No.: US11107698B2Publication Date: 2021-08-31
- Inventor: Chisayo Nakayama , Yuji Tanaka , Masahiko Harumoto , Masaya Asai , Yasuhiro Fukumoto , Tomohiro Matsuo , Takeharu Ishii
- Applicant: SCREEN Holdings Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Ostrolenk Faber LLP
- Priority: JPJP2017-025228 20170214
- International Application: PCT/JP2017/038378 WO 20171024
- International Announcement: WO2018/150635 WO 20180823
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/67

Abstract:
An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.
Public/Granted literature
- US20210134605A1 SUBSTRATE TREATING METHOD AND APPARATUS USED THEREFOR Public/Granted day:2021-05-06
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