Invention Grant
- Patent Title: Heating platform, thermal treatment and manufacturing method
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Application No.: US15866479Application Date: 2018-01-10
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Publication No.: US11107708B2Publication Date: 2021-08-31
- Inventor: Hsiao-Hua Peng , Hann-Ru Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G05D23/19 ; H01L21/02 ; H05B3/00

Abstract:
A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.
Public/Granted literature
- US20190148185A1 HEATING PLATFORM, THERMAL TREATMENT AND MANUFACTURING METHOD Public/Granted day:2019-05-16
Information query
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