Invention Grant
- Patent Title: Electromigration evaluation methodology with consideration of thermal and signal effects
-
Application No.: US16563799Application Date: 2019-09-06
-
Publication No.: US11107714B2Publication Date: 2021-08-31
- Inventor: Hsien Yu Tseng , Sheng-Feng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G06F30/367 ; G06F30/398 ; G06F119/08

Abstract:
A method for evaluating a heat sensitive structure involving identifying a heat sensitive structure in an integrated circuit design layout, the heat sensitive structure characterized by a nominal temperature, identifying a heat generating structure within a thermal coupling range of the heat sensitive structure, calculating an operating temperature of the first heat generating structure; calculating a temperature increase or the heat sensitive structure induced by thermal coupling to the heat generating structure at the operating temperature; and performing an electromigration (EM) analysis of the heat sensitive structure at an evaluation temperature obtained by adjusting the nominal temperature by the temperature increase induced by the heat generating structure.
Information query
IPC分类: