Invention Grant
- Patent Title: MRAM fabrication and device
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Application No.: US16559207Application Date: 2019-09-03
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Publication No.: US11107980B2Publication Date: 2021-08-31
- Inventor: Jung-Tang Wu , Wu Meng Yu , Szu-Hua Wu , Chin-Szu Lee , Han-Ting Tsai , Yu-Jen Chien
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; H01F10/32 ; H01F41/34 ; G11C11/16 ; H01L43/02
Abstract:
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Information query
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