Invention Grant
- Patent Title: Component and semiconductor manufacturing device
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Application No.: US16777371Application Date: 2020-01-30
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Publication No.: US11111573B2Publication Date: 2021-09-07
- Inventor: Takashi Hino , Tetsuo Inoue , Shuichi Saito
- Applicant: KYOCERA CORPORATION
- Applicant Address: JP Kyoto
- Assignee: KYOCERA CORPORATION
- Current Assignee: KYOCERA CORPORATION
- Current Assignee Address: JP Kyoto
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JPJP2017-147757 20170731
- Main IPC: C23C14/08
- IPC: C23C14/08 ; H01L21/3065 ; C30B25/10 ; C30B25/00 ; C30B28/12 ; C30B28/14 ; C30B29/16 ; C30B29/02 ; C30B28/00 ; C30B29/22
Abstract:
A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.
Public/Granted literature
- US20200165715A1 COMPONENT AND SEMICONDUCTOR MANUFACTURING DEVICE Public/Granted day:2020-05-28
Information query
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