Invention Grant
- Patent Title: Semimetal compound of Pt
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Application No.: US16448124Application Date: 2019-06-21
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Publication No.: US11111601B2Publication Date: 2021-09-07
- Inventor: Ke-Nan Zhang , Ming-Zhe Yan , Shu-Yun Zhou , Yang Wu , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing; TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201610862879.X 20160928
- Main IPC: C30B29/46
- IPC: C30B29/46 ; C01B19/00 ; C30B25/00 ; C30B9/06

Abstract:
The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtSe2. The method comprises: providing a PtSe2 polycrystalline material; placing the PtSe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end at a temperature of 1200 degrees Celsius to 1000 degrees Celsius and a second end opposite to the first end and at a temperature of 1000 degrees Celsius to 900 degrees Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.
Public/Granted literature
- US20190301052A1 SEMIMETAL COMPOUND OF PT Public/Granted day:2019-10-03
Information query
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