Invention Grant
- Patent Title: Method for calibrating verticality of particle beam and system applied to semiconductor fabrication process
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Application No.: US16709890Application Date: 2019-12-10
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Publication No.: US11112482B2Publication Date: 2021-09-07
- Inventor: Guangdian Chen , Jin Xing Chen , Zheng Yi Cai
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Wuhan
- Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee Address: CN Wuhan
- Agent Winston Hsu
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R35/00 ; G01R31/265 ; H01L21/67

Abstract:
The present invention provides a method for calibrating verticality of a particle beam. The method includes: providing a baseplate having a first sensor and a second sensor; emitting the particle beam to the first sensor of the baseplate from an emitter, such that a first datum is collected when the first sensor receives the particle beam; emitting the particle beam to the second sensor of the baseplate from the emitter, such that a second datum is collected when the second sensor receives the particle beam; calculating a first calibrating datum based on the first datum and the second datum; and adjusting the baseplate or the emitter based on the first calibrating datum if the first calibrating datum is out of a first predetermined range.
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