Invention Grant
- Patent Title: Memory device, semiconductor device, and semiconductor system
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Application No.: US16279917Application Date: 2019-02-19
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Publication No.: US11113145B2Publication Date: 2021-09-07
- Inventor: Chang Hyun Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2018-0019326 20180219
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/52 ; G06F3/06 ; G06F12/10
Abstract:
A memory device includes a plurality of pages. Each page includes a data region configured to store data, an error correction code (ECC) region configured to store ECC data that is used to detect and correct one or more errors occurring in the data stored in the data region, and a metadata region configured to store a write count of a corresponding page.
Public/Granted literature
- US20190258543A1 MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SYSTEM Public/Granted day:2019-08-22
Information query
