Provided is a method for cleaning a semiconductor wafer which can effectively reduce deposits on a main surface of a wafer. A method for cleaning a semiconductor wafer of the present disclosure includes supplying ozone water into a cleaning tank from a lower part of the cleaning tank with the ozone water overflowing from the upper part of the cleaning tank to outside the cleaning tank (first step), subsequently, stopping a supply of the ozone water (second step), subsequently, immersing a semiconductor wafer into the ozone water in the cleaning tank (third step), and subsequently, resupplying the ozone water into the cleaning tank from the lower part of the cleaning tank with the ozone water overflowing again from the upper part of the cleaning tank to outside the cleaning tank (fourth step).