The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (1), said method successively comprising: (a) the deposition of a layer (11) of titanium nitride or tantalum nitride on a main surface (1A) of the substrate and on the inner surface (10A, 10B) of at least one hole (10) extending into at least part of the thickness of said substrate; (b) the deposition of a layer (12) of copper on said layer (11) of titanium nitride or tantalum nitride; and (c) the filling of the hole (10) with copper, said method being characterized in that, during step (a), the substrate (1) is arranged in a first deposition chamber (100), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.