- Patent Title: Thyristor volatile random access memory and methods of manufacture
-
Application No.: US17090742Application Date: 2020-11-05
-
Publication No.: US11114438B2Publication Date: 2021-09-07
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- Applicant: TC Lab, Inc.
- Applicant Address: US CA Gilroy
- Assignee: TC Lab, Inc.
- Current Assignee: TC Lab, Inc.
- Current Assignee Address: US CA Gilroy
- Agency: Aka Chan LLP
- Main IPC: H01L27/102
- IPC: H01L27/102 ; H01L29/749 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/06 ; H01L21/762 ; H01L21/324 ; H01L29/45 ; H01L49/02 ; G11C11/39 ; H01L21/28 ; H01L21/321 ; H01L29/423 ; H01L29/08
Abstract:
A method of writing data into a volatile thyristor memory cell array and maintaining the data with refresh is disclosed.
Public/Granted literature
- US20210057415A1 Thyristor Volatile Random Access Memory and Methods of Manufacture Public/Granted day:2021-02-25
Information query
IPC分类:
