Invention Grant
- Patent Title: 3D semiconductor device and structure
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Application No.: US17063397Application Date: 2020-10-05
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Publication No.: US11114464B2Publication Date: 2021-09-07
- Inventor: Zvi Or-Bach , Jin-Woo Han
- Applicant: Monolithic 3D Inc.
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: PowerPatent
- Agent Bao Tran
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/47 ; H01L29/78 ; H01L29/167 ; H01L23/528 ; H01L27/02 ; H01L27/11578 ; H01L29/792 ; H01L27/11565 ; H01L27/11519 ; H01L27/11514 ; H01L27/11551
Abstract:
A 3D device, the device including: a first level including logic circuits; a second level including a plurality of dynamic memory cells; and a third level including a plurality of non-volatile memory cells, where the first level is bonded to the second level, and where the device includes refresh circuits to refresh the dynamic memory cells.
Public/Granted literature
- US20210050369A1 3D SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2021-02-18
Information query
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