An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer. The second electrode includes a connection region in which the second electrode is connected to third electrode, the connection region overlaps analog circuitry in a plan view, and in any cross-sections perpendicular to a surface of the semiconductor substrate and parallel to a column or row direction and that intersects at least one of the first electrodes, the digital circuitry includes no transistor that is located directly below the connection region.