Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16815636Application Date: 2020-03-11
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Publication No.: US11114527B2Publication Date: 2021-09-07
- Inventor: Makoto Koshimizu , Hideki Niwayama , Kazuyuki Umezu , Hiroki Soeda , Atsushi Tachigami , Takeshi Iijima
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/45 ; H01L29/49
Abstract:
A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI. Furthermore, on an outermost periphery of an active region where a plurality of nLDMOS devices are formed, a guard ring having the same potential as that of a drain region (D) is provided. And, via this guard ring, the device isolation portion (SS) is formed in a periphery of the active region, thereby not connecting but isolating the terrace insulating film (SL) and the device isolation portion (SS) from each other.
Public/Granted literature
- US20200212176A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2020-07-02
Information query
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