Invention Grant
- Patent Title: Semiconductor device including standard cells with header/footer switch including negative capacitance
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Application No.: US16585515Application Date: 2019-11-04
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Publication No.: US11114540B2Publication Date: 2021-09-07
- Inventor: Chien-Hsing Lee , Chih-Sheng Chang , Wilman Tsai , Chia-Wen Chang , Ling-Yen Yeh , Carlos H. Diaz
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L27/11 ; H01L27/092 ; H01L21/28 ; H01L29/16 ; H01L29/40 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.
Public/Granted literature
- US20200052087A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-02-13
Information query
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