Invention Grant
- Patent Title: Semiconductor device having reduced gate charges and superior figure of merit
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Application No.: US13475255Application Date: 2012-05-18
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Publication No.: US11114559B2Publication Date: 2021-09-07
- Inventor: Chanho Park , Kyle Terrill
- Applicant: Chanho Park , Kyle Terrill
- Applicant Address: US CA Pleasanton; US CA Santa Clara
- Assignee: Chanho Park,Kyle Terrill
- Current Assignee: Chanho Park,Kyle Terrill
- Current Assignee Address: US CA Pleasanton; US CA Santa Clara
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/417 ; H01L29/423
Abstract:
A semiconductor device includes a first group of trench-like structures and a second group of trench-like structures. Each trench-like structure in the first group includes a gate electrode contacted to gate metal and a source electrode contacted to source metal. Each of the trench-like structures in the second group is disabled. The second group of disabled trench-like structures is interleaved with the first group of trench-like structures.
Public/Granted literature
- US20120292696A1 SEMICONDUCTOR DEVICE HAVING REDUCED GATE CHARGES AND SUPERIOR FIGURE OF MERIT Public/Granted day:2012-11-22
Information query
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