Invention Grant
- Patent Title: Ferroelectric MFM inductor and related circuits
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Application No.: US16513429Application Date: 2019-07-16
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Publication No.: US11114564B2Publication Date: 2021-09-07
- Inventor: Miin-Jang Chen , Po-Hsien Cheng , Yu-tung Yin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. , National Taiwan University
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H03H7/06 ; H03H7/01 ; H01L29/66

Abstract:
Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.
Public/Granted literature
- US20200066916A1 Ferroelectric MFM Inductor And Related Circuits Public/Granted day:2020-02-27
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