Invention Grant
- Patent Title: Semiconductor device with an oxidized intervention and method for fabricating the same
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Application No.: US16696504Application Date: 2019-11-26
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Publication No.: US11114569B2Publication Date: 2021-09-07
- Inventor: Chih-Wei Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L21/28
Abstract:
The present application discloses a semiconductor device with an oxidized intervention layer and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a memory unit including a memory unit conductive layer positioned above the substrate and a lateral oxidized intervention layer positioned below the memory unit conductive layer, and a control unit positioned in the substrate and below the lateral oxidized intervention layer. The lateral oxidized intervention layer includes a sidewall portion and a center portion, and the sidewall portion has a greater concentration of oxygen than the center portion.
Public/Granted literature
- US20210159341A1 SEMICONDUCTOR DEVICE WITH AN OXIDIZED INTERVENTION AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-05-27
Information query
IPC分类:
