Invention Grant
- Patent Title: Memory structure and manufacturing method thereof
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Application No.: US16846393Application Date: 2020-04-12
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Publication No.: US11114570B2Publication Date: 2021-09-07
- Inventor: Hsiao-Wen Zan , Chuang-Chuang Tsai , Ching-Fu Lin , Zong-Xuan Li , Wei-Tsung Chen
- Applicant: E Ink Holdings Inc.
- Applicant Address: TW Hsinchu
- Assignee: E Ink Holdings Inc.
- Current Assignee: E Ink Holdings Inc.
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Priority: TW108114563 20190425
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/12 ; H01L29/24 ; H01L29/423 ; H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L21/28
Abstract:
A memory structure includes a substrate, a gate electrode, a first isolation layer, a thin metal layer, indium gallium zinc oxide (IGZO) particles, a second isolation layer, an IGZO channel layer, and a source/drain electrode. The gate electrode is located on the substrate. The first isolation layer is located on the gate electrode. The thin metal layer is located on the first isolation layer, and has metal particles. The IGZO particles are located on the metal particles. The second isolation layer is located on the IGZO particles. The IGZO channel layer is located on the second isolation layer. The source/drain electrode is located on the IGZO channel layer.
Public/Granted literature
- US20200343385A1 MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-10-29
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