Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16368026Application Date: 2019-03-28
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Publication No.: US11114571B2Publication Date: 2021-09-07
- Inventor: Shinichirou Yanagi , Yusuke Nonaka , Seiji Noma , Shinya Sakurai , Shogo Ikeura , Atsushi Kasahara , Shin Takizawa
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JPJP2016-204668 20161018,JPJP2017-76087 20170406
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L29/06 ; H01L21/265 ; H01L21/223 ; H01L29/868 ; H01L29/66 ; H01L29/861
Abstract:
A semiconductor device includes: a semiconductor substrate having a diode formation region; an upper diffusion region of a first conductivity type provided on a surface layer of a main surface of the semiconductor substrate in the diode formation region; and a lower diffusion region of a second conductivity type provided at a position deeper than the upper diffusion region with respect to the main surface in a depth direction of the semiconductor substrate, the lower diffusion region having a higher impurity concentration as compared to the semiconductor substrate. The lower diffusion region provides a PN joint surface with the upper diffusion region at a position deeper than the main surface, and has a maximum point indicating a maximum concentration in an impurity concentration profile of the lower diffusion region in the diode formation region.
Public/Granted literature
- US20190229219A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-07-25
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