Invention Grant
- Patent Title: Charge pump circuit
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Application No.: US16909215Application Date: 2020-06-23
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Publication No.: US11114937B2Publication Date: 2021-09-07
- Inventor: Guangjun Yang
- Applicant: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Current Assignee: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201910821840.7 20190902
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G11C5/14

Abstract:
A charge pump unit structure of a charge pump circuit includes a booster circuit unit, a positive pump transfer unit and a negative pump transfer unit. An output terminal of the booster circuit unit is connected to an input terminal of the positive pump transfer unit through a first switch circuit and to an input terminal of the negative pump transfer unit through a second switch circuit. An erase enable signal is connected to control terminals of the positive and negative pump transfer units. A first enable signal is connected to control terminals of the positive pump transfer unit and the first switch circuit. A second enable signal is connected to control terminals of the negative pump transfer unit and the second switch circuit.
Public/Granted literature
- US20210067034A1 CHARGE PUMP CIRCUIT Public/Granted day:2021-03-04
Information query
IPC分类: