Provided is a driving apparatus that includes a gate driving circuit that turns off a first semiconductor element upon receiving a turn-off signal, a measuring circuit that measures a parameter according to a voltage applied to the second semiconductor element, a timing generating circuit that generates a timing signal if the parameter satisfies a first condition during a time period in which the first semiconductor element is tuned off; and a driving condition change circuit that, in response to the timing signal, further decreases a changing speed of a gate voltage of the first semiconductor element than a reference speed during the time period in which the first semiconductor element is tuned off, wherein the gate driving circuit turns off the first semiconductor element in response to that the parameter satisfies a second condition during a time period in which the first semiconductor element is tuned on.