- Patent Title: Impedance calibration circuit and memory device including the same
-
Application No.: US17021728Application Date: 2020-09-15
-
Publication No.: US11115021B2Publication Date: 2021-09-07
- Inventor: Tongsung Kim , Youngmin Jo , Jungjune Park , Jindo Byun , Dongho Shin , Jeongdon Ihm
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2020-0013730 20200205
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K19/0185 ; G11C7/10 ; G11C8/10 ; H03K19/08

Abstract:
An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.
Public/Granted literature
- US20210242870A1 IMPEDANCE CALIBRATION CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2021-08-05
Information query