Invention Grant
- Patent Title: Image sensor with A/D conversion circuit having reduced DNL deterioration
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Application No.: US16668803Application Date: 2019-10-30
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Publication No.: US11115614B2Publication Date: 2021-09-07
- Inventor: Yoichi Iizuka , Fukashi Morishita
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-233834 20181213
- Main IPC: H04N5/378
- IPC: H04N5/378 ; H03M1/34 ; H03M1/56 ; H03K23/54

Abstract:
The present invention provides a semiconductor device having an integration type A/D converter capable of speeding up. The semiconductor device includes a Johnson counter 18 for transmitting a lower bit counter signal JC , a lower bit latch circuit 11 for outputting a lower bit latch result signal by a lower bit counter signal JC and a lower bit latch signal 14, a determination circuit 12 for outputting an upper bit latch signal 15 by a lower bit latch signal 14, a binary gray converter circuit 20 for transmitting an upper bit counter signal GR , and an upper bit latch circuit 13 for outputting an upper bit latch result signal by an upper bit counter signal GR and an upper bit latch signal 15.
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