One example includes a memory cell system. The memory cell system includes a quantizing loop configured to conduct a quantizing current in a first direction corresponding to storage of a first state of a stored memory state of the memory cell system and to conduct the quantizing current in a second direction opposite the first direction corresponding to storage of a second state of the stored memory state of the memory cell system. The memory cell system also includes a bias element arranged in the quantizing loop and which is configured to provide a substantially constant flux bias of the quantizing loop in each of the first and second states of the stored memory state.