Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16353044Application Date: 2019-03-14
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Publication No.: US11121047B2Publication Date: 2021-09-14
- Inventor: Cheng-Bo Shu , Tsung-Hua Yang , Chung-Jen Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/66 ; H01L23/522 ; H01L27/02 ; H01L23/528 ; H01L21/78
Abstract:
A semiconductor structure includes a substrate, a device, a contact via, a metal/dielectric layer, and a test structure. The device is over the substrate. The contact via is connected to the device. The metal/dielectric layer is over the contact via. The metal/dielectric layer includes a first portion and a second portion. The first portion of the metal/dielectric layer has a metallization pattern connected to the contact via. The second portion of the metal/dielectric layer is void of metal. The test structure is over the second portion of the metal/dielectric layer.
Public/Granted literature
- US20200294871A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2020-09-17
Information query
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