Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16462103Application Date: 2016-12-29
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Publication No.: US11121099B2Publication Date: 2021-09-14
- Inventor: Masayasu Ito , Katsumi Miyawaki , Hiroaki Ichinohe , Takashi Tsurumaki
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/089209 WO 20161229
- International Announcement: WO2018/123064 WO 20180705
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/12 ; H01L23/367 ; H01L23/488 ; H03F3/19 ; H03F3/21

Abstract:
A semiconductor device includes a heat sink, an integrated component in which a ceramic terminal having a microstrip line and a matching circuit are integrated into one unit, a lead fixed to the ceramic terminal, a matching substrate fixed to the heat sink, a semiconductor chip fixed to the heat sink, a plurality of wires configured to connect the matching circuit and the matching substrate and to connect electrically the matching substrate and the semiconductor chip, a frame configured to surround the matching substrate and the semiconductor chip in a plan view, and a cap provided on the frame.
Public/Granted literature
- US20200273825A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-08-27
Information query
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