Invention Grant
- Patent Title: Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
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Application No.: US15815265Application Date: 2017-11-16
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Publication No.: US11121139B2Publication Date: 2021-09-14
- Inventor: Martin M. Frank
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Randall Bluestone
- Main IPC: H01L27/11507
- IPC: H01L27/11507 ; H01L49/02 ; H01L21/285 ; H01L21/02 ; H01L29/78
Abstract:
A method of forming a ferroelectric/anti-ferroelectric (FE/AFE) dielectric layer is provided. The method includes forming a metal electrode layer on a substrate, wherein the metal electrode layer has an exposed surface with at least 80% {111} crystal face, and forming an FE/AFE dielectric layer on the exposed surface of the metal electrode layer, wherein the FE/AFE dielectric layer is a group 4 transition metal oxide.
Public/Granted literature
- US20190148390A1 HAFNIUM OXIDE AND ZIRCONIUM OXIDE BASED FERROELECTRIC DEVICES WITH TEXTURED IRIDIUM BOTTOM ELECTRODES Public/Granted day:2019-05-16
Information query
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