Invention Grant
- Patent Title: Method of adapting light extraction from a light emitting diode
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Application No.: US16702664Application Date: 2019-12-04
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Publication No.: US11121295B2Publication Date: 2021-09-14
- Inventor: Anis Daami , Marianne Consonni
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1872425 20181206
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/00 ; H01L33/30 ; H01L33/54
Abstract:
A method of adapting light extraction LEE from at least one light emitting diode with surface area S and perimeter P includes a step to encapsulate the light emitting diode with an encapsulation layer with a refraction index N, the refraction index N being determined based on a model taking account of an internal quantum efficiency of the light emitting diode. The extraction of light resulting from use of the encapsulation layer is such that the light emitting diode can achieve a predetermined external quantum efficiency.
Public/Granted literature
- US20200185578A1 METHOD OF ADAPTING LIGHT EXTRACTION FROM A LIGHT EMITTING DIODE Public/Granted day:2020-06-11
Information query
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