Invention Grant
- Patent Title: Magnetoresistive random access memory (MRAM) bit cell with a narrow write window distribution
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Application No.: US16752261Application Date: 2020-01-24
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Publication No.: US11133045B1Publication Date: 2021-09-28
- Inventor: Jamil Kawa , Victor Moroz
- Applicant: Synopsys, Inc.
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Park, Vaughan, Fleming & Dowler LLP
- Agent Laxman Sahasrabuddhe
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/12 ; H01L27/22
Abstract:
A bit cell is described. In some embodiments, the bit cell comprises (1) a magnetic tunnel junction (MTJ), and (2) an access transistor circuit coupled to the MTJ, wherein the access transistor circuit comprises a negative-capacitance field-effect-transistor.
Information query
